By Lionel M. Levinson, Shin-Ichi Hirano
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Extra resources for Grain boundaries and interfacial phenomena in electronic ceramics
It is also clear that the d-spacing of PZT(002) peaks of all thin films in this experiments were smaller than that of the bulk PZT value. This is due to the in-plane tensile stress in the film. The c-axis lattice parameter was decreased due to tensile stress in order to maintain the unit cell volume. The PZT(002) peak positions are varied with different film configuration under in-plane tensile stress. Since the peak positions of the PZT(002) in film(a) and the broad peak(002) in buffer layer(b) are very close, the real position of the PZT(002) peak in film(a) was determined by subtracting the film(b) profile from the film(a) profile.
Phase started to become significant. However, even at the highest synthesis temperature (240 "C), complete formation of the tetragonal phase was not obtained. The splitting of the X-ray diffraction peak at -45" 28, indicative of the presence of tetragonal BaTi03, is shown in Fig. 2 for powders synthesized for 24 h at several temperatures. The peak splitting becomes apparent at -180 "C. The concentrations of the cubic and tetragonal phases, as determined by Rietveld analysis, is shown in Fig. 3 for powders synthesized for 24 h at temperatures between 80 "C and 240 "C.
Thus three types of films, (a) PZT(50nm)/[PZT+ PT PT(55nm)]/Nb-ST7 (b) [PZT (55nm)lNb-ST and (c) PZT(SOnm)/NbST were fabricated. 5. Figure 3 shows the composition ratio (ZrPb, TdPb and (Zr+Ti)/Pb) + Fig. 3 Composition ratio of the film with the structure PZT/[PZT+PT(S k m ) ] / Nb-ST by X P S . calculated from X P S measurements as a function of sputtering depth in the film(a). g perovskite not only in PZT layer, but 3 also in the buffer layer. Excess Pb was observed on the film surface. The 42 43 44 45 46 47 48 49 2 0 I deg.