By Gerhard P. Willeke, Eicke R. Weber
Semiconductors and Semimetals has distinct itself during the cautious choice of recognized authors, editors, and members. initially widely recognized because the ''Willardson and Beer'' sequence, it has succeeded in publishing a variety of landmark volumes and chapters. The sequence publishes well timed, hugely correct volumes meant for long term effect and reflecting the really interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and may remain of significant curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, clinical laboratories and sleek undefined. This quantity is the second of a collection of seven regarding photovoltaics.
Written and edited via across the world well known experts
Relevant to a large readership: physicists, chemists, fabrics scientists, and gadget engineers in academia, clinical laboratories and smooth
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Additional resources for Advances in Photovoltaics: Part 2
The characteristic of the base-collector junction of an industrially fabricated npn transistor (E), where the diode edge is lying well passivated below an oxide layer, showed an ideal shape with an ideality factor of 1 over the whole bias range. 25), leading to two J eff 0 -values for each diode size. Also the reverse conductance Gp (the inverse of Rp, in units of S/mm2) was measured at about À1 V for each cell fraction. From these results, the dependencies of J eff 0 and Gp from the diode area A were obtained, which are shown in Fig.
It can be expected that this silicide forms a Schottky diode to the lowly doped bulk material and an ohmic contact to the highly doped emitter. , 2011b). The actual breakdown should occur at the lower end of the precipitate needle, where the field strength is highest due to the electrostatic tip effect. It will be shown below that, for a p–n junction, this tip effect reduces the breakdown voltage from À60 to À13 V. Even for a plane Schottky diode, the reverse current mechanism differs considerably from that in a p–n junction (Sze and Ng, 2007).
Therefore, in Breitenstein et al. (2006a,b), this model was further developed into the deep donor–acceptorpair (DAP) recombination model. The main argument for this model came from the observed local character of the recombination current, which obviously only flows in the positions of extended defects. At these defects the local density of gap states should be extremely high. Therefore the overlap of the wave functions, even between deep levels, should be sufficient for enabling significant inter-level charge transfer, which also may be called hopping.